On-chip multiphoton Greenberger–Horne–Zeilinger state based on integrated frequency combs

One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.     

The Applications of Order Reduction Methods in Nonlinear Dynamic Systems

Two different order reduction methods of the deterministic and stochastic systems are discussed in this paper. First, the transient proper orthogonal decomposition (T-POD) method is introduced based on the high-dimensional nonlinear dynamic system. The optimal order reduction conditions of the T-POD method are provided by analyzing the rotor-bearing system with pedestal looseness fault at both ends. The efficiency of the T-POD method is verified via comparing with the results of the original system. Second, the polynomial dimensional decomposition (PDD) method is applied to the 2 DOFs spring system considering the uncertain stiffness to study the amplitude-frequency response. The numerical results obtained by the PDD method agree well with the Monte Carlo simulation (MCS) method. The results of the PDD method can approximate to MCS better with the increasing of the polynomial order. Meanwhile, the Uniform-Legendre polynomials can eliminate perturbation of the PDD method to a certain extent via comparing it with the Gaussian-Hermite polynomials.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

高压下β-InSe弹性常数、电子结构的第一性原理研究

基于密度泛函理论的第一性原理计算方法,本文研究了高压对β-InSe弹性常数、机械性能和电子结构的影响.在0～20 GPa范围内,随着压力的增大,β-InSe的晶格常数、晶胞体积逐渐减小,结构参数a/a_0、c/c_0、V/V_0单调减小.在0～12 GPa范围内,弹性模量G、E、B和泊松比v随着压力增大而增大,在16 GPa时大幅减小,G、E、B分别减小了34.9%、53.3%、82.9%.随着压力增大,Se-In和In-In原子之间的电荷密度增大,Se-In原子之间的共价键增强,层间距减小.而且,β-InSe在20 GPa时带隙消失,发生了半导体向半金属的相变.     

Analysis and optimisation of grooved parallel slider bearings with cavitation

Meccanica - This paper introduces an analytical approach to optimize the textured bearing with cavitation to improve the load support. For this purpose, a grooved parallel slider bearing is...     

The High Energy X-ray telescope (HE) onboard the Insight-HXMT astronomy satellite

The Insight-Hard X-ray Modulation Telescope(Insight-HXMT) is a broadband X-ray and γ-ray(1-3000 ke V) astronomy satellite. One of its three main telescopes is the High Energy X-ray telescope(HE). The main detector plane of HE comprises 18 Na I(Tl)/Cs I(Na) phoswich detectors, where Na I(Tl) is used as the primary detector to measure ~ 20-250 ke V photons incident from the field of view(FOV) defined by collimators, and Cs I(Na) is used as the active shielding detector to Na I(Tl) by pulse shape discrimination. Additionally, Cs I(Na) is used as an omnidirectional γ-ray monitor. The HE collimators have a diverse FOV,i.e. 1.1°×5.7°(15 units), 5.7°×5.7°(2 units), and blocked(1 unit). Therefore, the combined FOV of HE is approximately5.7°×5.7°. Each HE detector has a diameter of 190 mm resulting in a total geometrical area of approximately 5100 cm2, and the energy resolution is ~15% at 60 ke V. For each recorded X-ray event by HE, the timing accuracy is less than 10 μs and the deadtime is less than 10 μs. HE is used for observing spectra and temporal variability of X-ray sources in the 20-250 ke V band either by pointing observations for known sources or scanning observations to unveil new sources. Additionally, HE is used for monitoring the γ-ray burst in 0.2-3 Me V band. This paper not only presents the design and performance of HE instruments but also reports results of the on-ground calibration experiments.     

Melatonin stimulates aromatase expression and estradiol production in human granulosa-lutein cells: relevance for high serum estradiol levels in patients with ovarian hyperstimulation syndrome

Ovarian hyperstimulation syndrome (OHSS) is one of the most life-threatening and potentially fatal complications associated with controlled ovarian hyperstimulation (COH) during in vitro fertilization (IVF) treatment. Although the pathogenesis of OHSS remains unclear, elevated serum estradiol (E2) levels before human chorionic gonadotropin (hCG) administration are associated with the risk of OHSS. The pineal hormone melatonin and its receptors are expressed in human granulosa cells and have been shown to stimulate E2 production. However, the effect of melatonin on the expression of aromatase, an enzyme responsible for a key step in the biosynthesis of E2, in human granulosa cells remains to be determined. Here, we demonstrate that melatonin upregulates aromatase expression in primary cultured human granulosa-lutein (hGL) cells through the melatonin receptor-mediated PKA-CREB pathway. Using a mouse model of OHSS, we demonstrate that administration of the melatonin receptor inhibitor luzindole inhibits the development of OHSS. In addition, the expression of ovarian aromatase and serum E2 levels are upregulated in OHSS mice compared to control mice, but this upregulation is attenuated by inhibition of the function of melatonin. Moreover, clinical results reveal that aromatase expression levels are upregulated in hGL cells from OHSS patients. Melatonin and E2 levels in the follicular fluid are significantly higher in OHSS patients than in non-OHSS patients. Furthermore, melatonin levels are positively correlated with E2 levels in follicular fluid. This study helps to elucidate the mechanisms mediating the expression of aromatase in hGL cells and provides a potential mechanism explaining the high E2 levels in patients with OHSS.Subject terms: Endocrine reproductive disorders, Endocrine reproductive disorders     

Conditional waiting time distributions of runs and patterns and their applications

In this paper, a simple and general method based on the finite Markov chain imbedding technique is proposed to determine the exact conditional distributions of runs and patterns in a sequence of Bernoulli trials given the total number of successes. The idea is that given the total number of successes, the Bernoulli trials are viewed as random permutations. Then, we extend the result to multistate trials. The conditional distributions studied here lead to runs and patterns-type distribution-free tests whose applications are widespread. Two applications are considered. First, a distribution-free test for randomness is applied to rainfall data at Oxford from 1858 to 1952. The second application is to develop runs and patterns-type distribution-free control charts which can be used as Phase I and/or Phase II control charts. Numerical results for two commonly used runs-type statistics, the longest run and scan statistics, are also given.

     

Astrocyte and ions metabolism during epileptogenesis:A review for modeling studies

As a large group of cells in a central nervous system, astrocytes have a great influence on ion and energy metabolism in a nervous system. Disorders of neuronal ion and energy metabolism caused by impaired astrocytes play a key role in the pathogenesis of epilepsy. This paper reviews the existing computational models of epileptogenesis resulting from impaired astrocytes and presents several open perspectives with regard to ion and energy metabolism-induced epileptogenesis in a neuron-astrocyte-capillary coupled model.     

基于等效介质原理的宽角超材料吸波体的理论分析

目前,很少有文章就如何实现宽角度吸波材料进行详细的理论分析和设计指导,设计宽角度吸波材料仍然是一件很困难的事情.本文基于等效介质理论对带有反射地板的单层介质超材料吸波体进行较为详细的理论分析.从基础电磁理论出发,推导TE波(横电波,电场方向与入射面垂直的平面电磁波)和TM波(横磁波,磁场方向与入射面垂直的平面电磁波)照射下吸波体的反射系数,分析实现宽角度吸波效果所需的等效电磁参数,为宽角度超材料吸波体的设计提供了理论基础.此外,论文还理论分析了实现宽带宽角吸波等效电磁参数所要满足的条件,并做了计算检验.结果表明,当介质等效电磁参数按照特殊曲线随频率发生变化时,理论上能实现宽带宽角的吸波效果.